A Moscow-based company has effectively mastered one of the most complex processes in semiconductor material production, cementing Russia’s technological sovereignty. LASSARD has become the third organization in the world to develop and deploy equipment capable of growing gallium arsenide and germanium monocrystals using the Vertical Gradient Freeze (VGF) method.
The development is an important achievement for the microelectronics sector in Russia. Modern electronics, telecommunications systems, photonics, and advanced defense technologies are all dependent on the capacity to produce high-quality semiconductor crystals. Russia has joined a select group of nations that are capable of independently manufacturing sophisticated compound semiconductor substrates as a result of this accomplishment.
A well-known popularizer of Russian microelectronics, Maxim Gorshenin, disclosed the achievement during a visit to the company’s production facilities. His visit underscored a meeting of domestic engineering and industrial policy, which has resulted in the development of new technological capability that was previously monopolized by a limited number of global actors.
A Technology That Was Previously Controlled by Germany
The VGF crystal growth technology was mainly mastered by two companies located in Germany prior to LASSARD’s breakthrough: PVA TePla and Freiberger Compound Materials GmbH. Freiberger has been a global supplier of compound semiconductor substrates used in microelectronics and optoelectronics for a long time. They produce high-quality gallium arsenide wafers for advanced devices.
In the interim, PVA TePla is a company that specializes in the creation of industrial crystal-growing systems that are employed in the semiconductor manufacturing process. Its VGF technology is crucial for the production of modern optoelectronic devices, such as LEDs and laser systems, as it allows for the production of compound semiconductor crystals with an exceptionally low defect density, including gallium arsenide and indium phosphide.
Nevertheless, access to these technologies has been complicated by geopolitical realities. The imposition of sanctions in recent years has resulted in the inability of Russian consumers to acquire critical equipment from Germany. Access to specific specialized manufacturing systems was already restricted or restricted prior to the imposition of sanctions.
This situation posed a strategic challenge for the semiconductor ecosystem in Russia. The development of domestic microelectronics would be severely restricted if advanced crystal growth apparatus were not available. LASSARD’s technology was ultimately the result of the response to that challenge.
Industrial Policy and Government Support
The Russian Ministry of Industry and Trade’s involvement was a critical factor in the project’s success. Government officials acknowledged the strategic significance of crystal growth technologies and implemented a research and development initiative to resolve the issue on a domestic level.
The ministry commissioned an experimental design project with the objective of developing a crystal growth system that is completely Russian and capable of executing the VGF process. LASSARD accepted the challenge and proceeded with the design and construction of the requisite apparatus from the ground up.
Expertise in industrial software development, thermal engineering, materials science, and mechanical engineering was necessary for the undertaking. The successful integration of these disciplines into a functional system posed a substantial engineering challenge.
The company was able to build a functional installation that could consistently produce high-quality monocrystals of gallium arsenide and germanium after investing several years in development.
Understanding the Vertical Gradient Freeze Method
The Vertical Gradient Freeze method is one of the most sophisticated techniques employed to generate high-purity monocrystalline materials for semiconductor applications. Polycrystalline raw materials are melted in a crucible and later chilled at a controlled rate under precise temperature conditions. The formation of a single crystal is initiated by a seed crystal that is positioned at the bottom of the crucible, as the material solidifies.
The VGF technique stands out by its meticulously maintained temperature gradient. Engineers guarantee that the crystal develops in a highly ordered structure with minimal defects by regulating the flow of heat through the furnace.
In certain compound semiconductors, VGF can offer stronger crystal growth conditions and improved structural uniformity in comparison to conventional methods like the Czochralski process. These features are particularly critical for materials such as gallium arsenide, which are extensively employed in high-frequency electronics and optoelectronics.
Gallium arsenide is a compound semiconductor that is of the utmost in contemporary technology. Its peculiar electronic properties enable devices constructed from it to operate at higher frequencies and with greater efficacy than conventional silicon components. The substance is often used in satellite communications, advanced radar systems, radio-frequency circuits, and laser diodes.
A Production System That Is Completely Domestic
Alexander Panov, the director of one of LASSARD’s production sections, stated that the company intentionally built the system with a majority of Russian components.
The mechanical assemblies and metal components of the equipment were produced domestically. Graphite supplied by Russian manufacturers was used to fabricate the thermal unit that serves as the core of the crystal growth system.
The electronic control system and power modules were also developed and manufactured in Russia. The company’s engineers wrote the software that regulates the entire process, from temperature to crystal growth monitoring.
This significant degree of localization was essential for guaranteeing that the system could be built and maintained without the involvement of foreign suppliers. Domestic development significantly enhances resilience in an industry where specialized components and software are frequently subject to strict regulation.
The Mechanism of Crystal Growth
The starting point in the formation of a semiconductor crystal is the meticulous preparation of the basic materials. A charge or batch is a precisely formulated composition that is the result of the combination of these materials. The crucible is filled with the mixture, and a seed crystal is positioned at the apex of the crucible.
Subsequently, the complete assembly is inserted into the VGF furnace. The material is heated until it completely dissolves, resulting in the formation of a liquid phase within the crucible.
The crystallization process begins when the molten material reaches the appropriate temperature. As the fluid gradually solidifies, the seed crystal initiates the formation of a single crystal structure.
Each system in LASSARD’s installations is capable of simultaneously cultivating three crystals. The crystals exhibit a progressive upward growth as the solidification front advances through the melt.
The growth rate is extremely slow and carefully controlled. The crystals typically develop at a rate of approximately one to two millimeters per hour, according to Panov.
Depending on the customer’s specifications, the crystals gradually achieve diameters of approximately 100 to 150 millimeters. When the crucible is entirely loaded, the entire process, from the melting of the charge to the completion of crystal growth, can take approximately two weeks.
From Crystals to Semiconductor Devices
At the end of the crystal growth process, the ingots that result endure additional processing. Wafers are thin slices that are cut from the massive cylindrical crystals.
The wafers are subsequently refined and treated to produce the ultra-smooth surfaces necessary for semiconductor manufacturing. During this phase, the wafers function as substrates for the development of intricate stratified structures, which are referred to as heterostructures.
Additional epitaxial growth processes deposit ultra-thin layers of semiconductor materials onto the wafer surface, resulting in the formation of heterostructures. The active structures utilized in contemporary electronic and optoelectronic devices are composed of these layers.
After the application of photolithography and microfabrication, the structures can be converted into components such as optical sensors, high-frequency transistors, and laser diodes.
Telecommunications, aerospace, defense systems, and advanced computing technologies are all industries that require these instruments.
LASSARD’s Industry Role and Growth
In 2015, LASSARD was established in Moscow with a focus on the development of engineering and scientific research in the areas of technical innovation, machine-tool technologies, and natural sciences. The company has consistently enhanced its capabilities in high-precision industrial systems over the past decade.
The company had generated revenues of approximately 2.6 billion rubles and reported a profit of over 126 million rubles by 2024. Its expanding influence within Russia’s technology sector is illustrated by these figures.
The successful development of VGF crystal growth equipment is a testament to the ability of relatively new engineering firms to contribute to strategic industrial capabilities when they are supported by targeted government programs and scientific expertise.
Strategic Consequences for the Technology Sector of Russia
In the global technology competition, the capacity to manufacture advanced semiconductor materials domestically has become increasingly critical. The vulnerability of countries that rely significantly on foreign technology suppliers has been underscored by supply chain disruptions, export restrictions, and geopolitical tensions.
Russia has improved its capacity to manufacture critical materials required for microelectronics and photonics by mastering VGF crystal growth.
Despite the fact that this accomplishment does not immediately address all of the challenges that Russia’s semiconductor industry is currently confronting, particularly in the field of advanced chip fabrication, it is a critical first step in the establishment of an autonomous technological ecosystem.
The development also illustrates the potential of targeted industrial policy and scientific collaboration to assist countries in surmounting technological obstacles and reestablishing domestic manufacturing capabilities.
As the global demand for advanced electronic systems continues to increase, technologies such as monocrystal semiconductor production will remain essential to the future of global innovation. The entrance of Russia into this highly specialized field is a clear indication of its commitment to maintaining a presence in the rapidly changing high-technology manufacturing landscape.