The second stage of a unique experiment to grow semiconductor materials in Earth orbit is scheduled to be conducted by Russian cosmonauts in 2026. This experiment will use the first Russian installation that has been particularly designed for space operations. The experiment, “Ekran-M,” introduces a new chapter in the annals of national science and has the potential to establish the foundation for the future production of ultra-pure semiconductors beyond Earth.
In the autumn of the previous year, the initial phase of the project on the International Space Station was effectively concluded. The device was delivered to the station during that phase, and it was the first time that the feasibility of growing crystalline films in outer space was demonstrated. Scientists are currently conducting an analysis of the results, which have yielded significant insights into the potential of this technology for future applications.
The Scientific Concept and the Project’s Origins
As part of Roscosmos’ scientific research program, the Ekran-M initiative was developed by specialists from the Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences. Its primary objective is to investigate the feasibility of synthesizing ultra-pure semiconductor materials in outer space using the natural vacuum of low Earth orbit to achieve this.
Molecular beam epitaxy, a technology that enables the growth of atomically thin films on specially prepared crystalline substrates, is the primary approach employed in the experiment. This method guarantees structural precision and exceptional purity, which are indispensable for sophisticated semiconductor devices. The equipment necessary to achieve the ultra-high vacuum conditions, which are on the order of ten to the minus eight pascals, is exceedingly complex and costly on Earth. In space, where a near-perfect vacuum is naturally present, these conditions can be accomplished without the need for a significant amount of infrastructure. This makes it possible to obtain materials that are free of oxygen, carbon, and other contaminants. Russian scientists are striving to capitalize on this fundamental advantage.
Design Features of the Ekran-M Installation
Almost wholly from the ground up, the new space-based semiconductor growth system was developed. This presented a significant engineering challenge due to the stringent specifications that were placed on space hardware. The experimental installation was required to be compact, radiation-resistant, lightweight, and capable of operating consistently in adverse temperature and microgravity environments.
The substrate heater, molecular sources, and substrate transfer mechanism were all developed domestically. These elements were specifically designed for space operation, in contrast to their terrestrial counterparts. This necessitated a profound comprehension of the behavior of materials in the presence of celestial factors and a high level of engineering innovation. A specialized research and manufacturing company produced the electronic control unit for the installation in full conformance with the project’s requirements.
The installation successfully completed all pre-flight experiments and was launched to the International Space Station aboard a Progress cargo spacecraft in September 2025.
Stage One: Results and Initial Success
The first stage of the experiment was conducted by Russian cosmonauts, who mounted the apparatus on the exterior of the Russian segment of the International Space Station. They completed a full cycle of operations to synthesize a semiconductor film on a crystalline substrate. The crew spent several hours connecting, configuring, and situating the experimental module during the installation and initial activation of the module during a spacewalk.
The process of crystal growth was substantially simplified by the ISS’s exceptionally clean vacuum environment, which was devoid of atmospheric gases. Cartridges that contained crystalline materials that had been grown were manufactured as a consequence of the initial experiments. Specifically, scientists were able to produce films of gallium arsenide that were grown on gallium arsenide substrates. Power electronics, lasers, photodiodes, and solar cells all rely on this semiconductor, which is one of the most popular.
The structural quality, purity, and performance characteristics of these samples are currently being thoroughly examined in order to compare them with materials produced using conventional Earth-based technologies.
Scientific Expectations and Technological Foundations
Molecular beam epitaxy is a highly intricate and sensitive process. It entails the evaporation of source materials, including gallium and arsenic, and the subsequent condensation of their atoms on a crystalline surface, where they form a highly ordered lattice. This necessitates sophisticated vacuum chambers and precise control systems on Earth to prevent contamination and defects.
Nevertheless, the natural vacuum of space in orbit facilitates the attainment of these conditions. A single installation can accommodate the essential parameters for various materials without the necessity of multiple vacuum systems. This simplification enables the possibility of producing semiconductor structures with impurity levels and defect densities that are significantly lower than those currently achievable on Earth.
The Second Stage: Plans for 2026
Russian cosmonauts will continue to operate the Ekran-M installation on the International Space Station during the second phase of the experiment, which is scheduled to commence in 2026. In this phase, researchers intend to conduct more comprehensive investigations of the structures that have been produced and to evaluate new synthesis regimes. It is anticipated that these experiments will enhance the technology and furnish the necessary information for more ambitious and intricate space-based manufacturing endeavors.
The initial samples are still being analyzed by scientists in terms of their electrical, optical, and structural properties. Preliminary findings indicate that materials grown in space possess exceptionally high performance characteristics, rendering them highly prospective for applications in optoelectronics and microelectronics.
Prospects: Orbital Semiconductor Manufacturing and the Future
The eventual deployment of semiconductor production directly in orbit is one of the project’s most ambitious objectives. In the long term, this could facilitate the production of materials that are either impossible or challenging to produce on Earth as a result of vacuum limitations and technological constraints. Photosensitive materials for high-efficiency solar cells, as well as components for quantum devices and other cutting-edge technologies, are of particular interest.
In the future, it is anticipated that the experiment will continue aboard the Russian Orbital Station, which is set to commence construction in 2027. It is anticipated that this new platform will offer more consistent operating conditions and facilitate a wider variety of scientific and technological experiments, including those associated with space-based manufacturing.
Russia has the potential to become a global champion in the development of orbital production technologies if the project is fully realized. This would facilitate the industrial-scale production of sophisticated materials that are employed in electronics, sensors, energy systems, and other critical sectors.
In conclusion,
The Ekran-M experiment is not merely a scientific investigation; it is an endeavor to establish a novel industrial sector in outer space. The project advances humanity toward a future in which space is not only explored but also utilized as a platform for advanced manufacturing by cultivating materials with unparalleled purity and distinctive properties in conditions that are not present on Earth. The second iteration of the experiment represents a significant advancement toward that future.