At a seminar conducted at the Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences (ISP SB RAS, Novosibirsk), Candidate of Physical and Mathematical Sciences Dmitry Shcheglov discussed the potential development of X-ray lithography technology in Russia through making use of the new SKIF facility, which is presently undergoing commissioning in Akademgorodok. According to him, SKIF could serve a crucial function in establishing a fundamentally innovative platform for microlithography using the X-ray spectrum, thereby facilitating the overcoming of current technological limitations in electronics.
The SKIF experiment is merely one among many scientific installations. It signifies megascience-level infrastructure—a cutting-edge foundation supporting research in physics, materials science, biology, and various other scientific disciplines. The facility has commenced the commissioning phase near Novosibirsk, with the initial scientific investigations scheduled for 2025.
What Is SKIF and Its Significance
The Siberian Circular Photon Source (SKIF) is a sophisticated fourth-generation synchrotron radiation facility with an electron energy of 3 GeV. It is being built as a major scientific facility in the Novosibirsk region, integrating accelerator systems with experimental stations that will enable researchers to work with highly brilliant, intense, and coherent X-ray radiation.
The key scientific feature of SKIF is its ultra-low emittance, a parameter that characterizes the “purity” and focusability of the electron beam. Low emittance means that the emitted radiation has very high brightness, increased coherence, and a narrow angular spread—precisely the qualities required for the most demanding experiments in both fundamental and applied science.
The facility is being established as part of Russia’s National Project “Science and Universities,” with the involvement of the Budker Institute of Nuclear Physics of the Siberian Branch of the RAS and other research institutions. The complex will comprise multiple experimental beamlines, engineering facilities, laboratories, and supporting infrastructure dedicated to addressing a broad spectrum of challenges—from materials science and chemistry to biology and pharmacology.
The Role of Synchrotron Radiation and Its Advantages
Synchrotron radiation is electromagnetic emission produced by charged particles, mainly electrons, during their acceleration within magnetic fields. This form of radiation holds several unique properties, including exceptionally high brightness, a wide spectral range spanning from infrared to hard X-rays, pronounced directionality and coherence, and the capacity for precise spectral modulation.
These attributes establish synchrotron radiation as an essential instrument for atomic-scale structural analysis, facilitating research spanning biomolecular crystallography to the investigation of femtosecond phenomena in advanced materials.
Today, over 50 synchrotron radiation facilities are in operation globally as prominent national and international research institutions. Among these are ESRF in France, MAX IV in Sweden, Diamond Light Source in the United Kingdom, and NSLS-II in the United States. These facilities deliver millions of hours of research support to scientists investigating materials, energy systems, chemistry, biology, and medicine.
X-Ray Lithography: A Technological Challenge of the 21st Century
Lithography is the basic technology used for the fabrication of circuit patterns on semiconductor substrates. It specifies the topology and dimensions of microelectronic components, thereby influencing the performance, energy efficiency, and capabilities of contemporary electronic devices.
The dominant global technological standard in semiconductor fabrication is founded on EUV lithography (extreme ultraviolet lithography), which uses a wavelength of approximately 13.5 nanometers. This technology underpins the manufacturing of sophisticated chips at leading companies such as TSMC, Samsung, and Intel. Nevertheless, additional miniaturization of features necessitates a shift to even shorter wavelengths, positioning X-ray lithography as a promising subsequent approach.
So far, the widespread industrial adoption of X-ray lithography has been hindered by enormous technological challenges. These requirements cover the necessity for ultra-precise radiation sources, sophisticated optical systems, highly accurate photomasks, X-ray-sensitive resists, specialized instrumentation, and exceptionally stable vacuum environments. Nonetheless, if these obstacles are surmounted, X-ray lithography has the potential to facilitate major developments in feature scaling and to pave the way for completely new semiconductor architectures.
How SKIF Can Facilitate the Advancement of X-Ray Lithography
According to Dmitry Shcheglov and other Russian scientists, the unique features of SKIF position it as a promising substrate for X-ray lithography experiments. SKIF is a bright and highly coherent X-ray source that can potentially be adapted for complex experiments involving the formation of micro- and nanostructures using X-ray radiation.
This approach represents an integration of fundamental scientific principles with technological application. Using a synchrotron source, physicists are able to evaluate and enhance new photomask materials, investigate various exposure regimens, analyze X-ray interactions with resists, and develop experimental methodologies that could subsequently underpin industrial X-ray lithography processes.
“As a result, we are gaining a very powerful tool,” Shcheglov emphasized. “I urge everyone to participate actively. We need to secure beamlines in the next construction phase now for research in semiconductor physics and solid-state physics.”
International Counterparts and Global Experience
Currently, there are no large-scale commercial semiconductor manufacturing facilities that use synchrotron radiation directly for mass-production lithography. Global industry executives continue to mainly depend on EUV scanners manufactured by ASML. Nevertheless, research on X-ray lithography continues.
For instance, a U.S. startup named Substrate has recently introduced an X-ray lithography system using particle accelerators that could potentially attain critical dimensions of approximately 2 nanometers, establishing itself as a potential alternative or complement to EUV technology.
Furthermore, numerous synchrotron facilities worldwide currently employ X-ray beams for deep X-ray lithography (LIGA), a technique employed in the manufacturing of micro-mechanical and micro-optical components. Facilities such as ANKA in Germany have demonstrated that synchrotron-based X-ray lithography is highly effective for fabricating exceptionally precise microstructures, although it is not yet adopted for mainstream semiconductor manufacturing.
There is also increasing interest in X-ray free-electron lasers (XFELs), which produce ultra-short and highly intense X-ray pulses. These sources may prove essential for future methodologies in lithography and for investigating ultrafast structural changes in materials.
Technological Obstacles and Constraints
For SKIF to serve as an effective platform for the development of X-ray lithography, several major obstacles must be overcome. These encompass the development of sophisticated X-ray optics for beam shaping and focusing, the fabrication of highly sensitive and stable X-ray resists, the modification of synchronization and control systems to manage intense radiation, and getting to the point of long-term stability and reproducibility appropriate for industrial-scale applications.
Currently, many of these issues continue to be the focus of ongoing research rather than verified engineering solutions. Nevertheless, the presence of a strong domestic synchrotron facility in Russia establishes the essential conditions for systematic experimentation and for attracting international research teams to collaborate on addressing these issues.
Conclusion: A Scientific Breakthrough and a Technological Opportunity
The SKIF initiative in Akademgorodok represents considerably more than simply a new research facility. It signifies a cornerstone for a new stage of technological advancement in Russia. By integrating fundamental studies with prospective applied approaches, SKIF creates opportunities in fields such as X-ray lithography, a vital technology for the future of microelectronics.
If Russia effectively leverages SKIF’s capabilities and establishes a robust ecosystem of scientists, engineers, and technologists around it, the facility could offer a substantial competitive edge in the global scientific and technological arena. It would facilitate progress in materials science and high-resolution structural analysis and potentially lead to a breakthrough in semiconductor manufacturing technologies.
At a time when developments in microelectronics are progressively limited by the physical boundaries of current lithographic techniques, infrastructure initiatives such as SKIF may act as a catalyst for reimagining the development of future microchips—from foundational experiments to revolutionary industrial innovations.